3-D Magnetic Memory Device

TECHNOLOGY OPPORTUNITY

Florida International University (FIU) is seeking companies interested in commercializing a high capacity 3-D Magnetic Memory Device by which data can be manipulated and stored utilizing the entire 3D recording medium. It offers device implementations which are in the 100 terabyte per square inch data density range; a density drastically exceeding theoretical capabilities of 2D memory technologies such as magnetic hard-drives, CDs, DVDs, and flash memory technology. This patented technology provides for faster data transmission rates by integrating the non-volatility of magnetic media with parallel data recording and retrieval. The three dimensional nature of this recording technology allows for a much higher super-paramagnetic limit than that of 2D magnetic recording systems. Furthermore, due to the fact that each cell in a 3D magnetic recording arrangement does not have to be in the nano-scale range, sophisticated and expensive nanofabrication tools are not necessary for fabrication.

A possible materialization of this 3D memory technology is a magnetic memory device the size of a dime which, unlike hard drives, has no moving parts and is capable of storing many gigabytes of electromagnetic radiation insensitive data. A parallel write/read mechanism would make the memory device as fast as a semiconducting Static Random Access Memory (SRAM) device, but unlike the SRAM device, this memory device is non-volatile. Similar to the popular flash memory, this device would be capable of being connected to a PC port or USB port while retaining a higher data capacity than current flash memory technology.

APPLICATIONS

An electronic memory/recording device used to store larger amounts of data in a compact three dimensional space than existing memory technology.

ADVANTAGES
  • Capable of storing much more information in a confined space (100 terabytes-per-square-inch information density).
  • Does not require sophisticated nanofabrication tools.
  • Does not require moving parts.
  • Data storage is non-volatile and is unaffected by EM radiation.
  • Fast data transmission, comparable to transmission rates in SRAM technology due to parallel data recording and retrieval.
  • Compatible with USB port.
  • Patent has already been issued.
CONTACT

For additional information about this technology opportunity, please contact Elizabeth Garami at egarami@fiu.edu or by phone at 305-348-0008 and ask about record IP 0403.